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   <dc:identifier>https://dx.doi.org/10.22000/694</dc:identifier>
   <dc:creator>Lehmeyer, Johannes</dc:creator>
   <dc:creator>Citak, Timon</dc:creator>
   <dc:creator>Weber, Heiko B.</dc:creator>
   <dc:creator>Krieger, Michael</dc:creator>
   <dc:title>Research data to the manuscript "Evaluation of 4H-SiC MOSFET transfer characteristics using machine-learning techniques", published in Electronics Letters, DOI:10.1049/ell2.12752</dc:title>
   <dc:publisher>Lehmeyer, Johannes</dc:publisher>
   <dc:date>2023</dc:date>
   <dc:subject>Physics</dc:subject>
   <dc:type>dataset</dc:type>
   <dc:subject>Dataset</dc:subject>
   <dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
   <dc:rights>https://creativecommons.org/licenses/by-nc/4.0/legalcode</dc:rights>
   <dc:subject>Interface traps</dc:subject>
   <dc:subject>Silicon carbide</dc:subject>
   <dc:subject>Transfer characteristics</dc:subject>
   <dc:format>application/x-tar</dc:format>
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