2026-10-06T13:10:02Zhttps://www.radar-service.eu/oai/OAIHandler10.58160/a21cayaxuk0rzq022026-08-25T03:00:07Z
https://dx.doi.org/10.58160/a21cayaxuk0rzq02
Huang, Xiaochun
Experimental realization of the topologically nontrivial phase in monolayer Si2Te2_new
University of Würzburg
2026
Physics
Materials Science
dataset
Dataset
LT-4 Laboratory
Instrument
info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by/4.0/legalcode
Sa, Baisheng
Bode, Matthias
Xiong, Rui
Zhao, Lingxiao
Source Data used for the manuscript "Experimental realization of the topologically nontrivial phase in monolayer Si2Te2 published in Nature Communications. In this study we realized the epitaxial growth of strain-free monolayer Si2Te2 on HfTe2 substrate. Scanning tunneling microscopy and spectroscopy reveal an intact (1×1) lattice and a bulk band gap of ~300 meV, consistent with first-principles calculations. Moreover, pronounced edge states extending ~2.0 nm from the island boundary are observed in monolayer Si2Te2, exhibiting characteristics expected for topological edge modes.
Our results establish monolayer Si2Te2 as a large-gap two-dimensional topological-insulator platform for topological phenomena and device concepts at elevated temperatures.
X.H. would like to thank for the financial support from the DFG through the Hallwachs-Röntgen Postdoc Program of ct.qmat (EXC 2147, Project No. 390858490). L.Z. would like to thank for the financial support from the Guangdong Provincial Quantum Science Strategic Initiative (GDZX2401011).
Quantum spin Hall insulators
Monolayer Si2Te2
Scanning tunneling microscopy and spectroscopy
Molecular beam epitaxy
Density functional theory
Sa, Baisheng
Bode, Matthias
Xiong, Rui
Zhao, Lingxiao
eng
https://ror.org/018mejw64
https://ror.org/00tjzgn92
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